Multiple-bit non-volatile memory utilizing non-conductive charge trapping gate

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6670669
SERIAL NO

10030117

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Abstract

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The invention is to provide a novel non-volatile memory capable of recording multi-bit data. The invention is a non-volatile memory which has: first and second source-drain regions SD1, SD2 at the surface of a semiconductor substrate; and a non-conductive trapping gate TG, and a conductive control gate CG, formed on a channel region there between via an insulating film. Further, the non-volatile memory has a first or second state in which, by applying a voltage between the first and second source-drain regions SD1, SD2, hot electrons produced in the vicinity of the first or second source-drain region are locally captured in a first or second trapping gate region TSD1, TSD2 in the vicinity of them; and, a third state in which, by applying a voltage between the control gate and the channel region, electrons (or charge) are (is) injected into the entire trapping gate. According to whether or not the above-mentioned third state is adopted, one-bit information can be recorded, and according to whether or not the first and second states are adopted, two-bit information can be recorded. Consequently, information totaling three bits can be recorded in a single memory cell.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
MONTEREY RESEARCH, LLCSANTA CLARA, CA, US2057

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kawamura, Shoichi Kawasaki, JP 28 558

Cited Art Landscape

Patent Info (Count) # Cites Year
 
Halo LSI, Inc. (1)
* 6255166 Nonvolatile memory cell, method of programming the same and nonvolatile memory array 236 1999
 
SAIFUN SEMICONDUCTORS LTD. (1)
* 6011725 Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping 1167 1999
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
CYPRESS SEMICONDUCTOR CORPORATION (2)
* 6950343 Nonvolatile semiconductor memory device storing two-bit information 4 2003
* 2004/0100,825 Nonvolatile semiconductor memory device storing two-bit information 0 2003
 
SPANSION ISRAEL LTD (10)
6992932 Method circuit and system for read error detection in a non-volatile memory array 309 2003
7352627 Method, system, and circuit for operating a non-volatile memory array 10 2006
7420848 Method, system, and circuit for operating a non-volatile memory array 0 2006
8253452 Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same 1 2006
8053812 Contact in planar NROM technology 3 2006
7512009 Method for programming a reference cell 0 2006
7466594 Dynamic matching of signal path and reference path for sensing 3 2006
7701779 Method for programming a reference cell 1 2006
7743230 Memory array programming circuit and a method for using the circuit 0 2007
7964459 Non-volatile memory structure and method of fabrication 3 2009
 
SANDISK TECHNOLOGIES LLC (10)
6897522 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements 16 2001
* 2003/0082,871 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements 0 2001
* 2003/0080,370 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements 37 2002
6925007 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements 128 2002
* 2003/0109,093 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements 30 2002
7341918 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements 15 2005
7342279 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements 35 2005
7579247 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements 5 2008
7479677 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements 5 2008
7834392 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements 4 2009
 
MACRONIX INTERNATIONAL CO., LTD. (2)
* 7593264 Method and apparatus for programming nonvolatile memory 2 2006
* 7492636 Methods for conducting double-side-biasing operations of NAND memory arrays 13 2007
 
RENESAS ELECTRONICS CORPORATION (3)
* 6856550 Nonvolatile semiconductor memory device capable of uniformly inputting/outputting data 22 2002
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* 2005/0128,811 Nonvolatile semiconductor memory device capable of uniformly inputting/outputting data 71 2005
 
SAMSUNG ELECTRONICS CO., LTD. (4)
7602010 Multi-bit multi-level non-volatile memory device and methods of operating and fabricating the same 2 2006
7531870 SONOS memory device having nano-sized trap elements 3 2007
* 2007/0267,688 SONOS memory device having nano-sized trap elements 0 2007
7825459 Method of operating a SONOS memory device 0 2009
 
SAIFUN SEMICONDUCTORS LTD. (20)
7136304 Method, system and circuit for programming a non-volatile memory array 30 2003
7142464 Apparatus and methods for multi-level sensing in a memory array 6 2004
7317633 Protection of NROM devices from charge damage 4 2005
7668017 Method of erasing non-volatile memory cells 1 2005
7221138 Method and apparatus for measuring charge pump output current 0 2005
7738304 Multiple use memory chip 6 2005
7468926 Partial erase verify 10 2006
7369440 Method, circuit and systems for erasing one or more non-volatile memory cells 3 2006
7638850 Non-volatile memory structure and method of fabrication 3 2006
7786512 Dense non-volatile memory array and method of fabrication 5 2006
7405969 Non-volatile memory cell and non-volatile memory devices 2 2006
7760554 NROM non-volatile memory and mode of operation 4 2006
7692961 Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection 7 2006
7532529 Apparatus and methods for multi-level sensing in a memory array 6 2006
7457183 Operating array cells with matched reference cells 3 2006
7675782 Method, system and circuit for programming a non-volatile memory array 4 2006
7605579 Measuring and controlling current consumption and output current of charge pumps 7 2006
7808818 Secondary injection for NROM 13 2006
7638835 Double density NROM with nitride strips (DDNS) 8 2006
7535765 Non-volatile memory device and method for reading cells 10 2007
 
Aifun Semiconductors Ltd. (1)
6963505 Method circuit and system for determining a reference voltage 116 2003
* Cited By Examiner