Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
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United States of America Patent
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Jan 6, 2004
Grant Date -
Aug 29, 2002
app pub date -
Feb 28, 2001
filing date -
Feb 28, 2001
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Expired
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Abstract
Compound semiconductor structures and devices can be grown on patterned oxide layers deposited on silicon. The deposition of Group II-VI and Group II-V compound semiconductors on patterned wafers results in an increase in the critical thickness for lattice mismatched layers and the relief of strain energy through side walls. As a result, high crystalline quality compound semiconductor material can be grown on less expensive and more accessible substrate to more cost effectively produce semiconductor components and devices having enhanced reliability.
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