Method for growing a solid type II-VI semiconductor material
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United States of America Patent
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Jan 6, 2004
Grant Date -
Dec 19, 2002
app pub date -
Jun 25, 2002
filing date -
Nov 13, 2000
priority date (Note) -
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Abstract
A growth method for a bulk II-VI type semiconductor material, including at least a first component and a second component. The method supplies in a crucible a charge including the components, with proportions of the components being such that the first component is used as a solvent. The crucible is then laced in an open tube reactor. The reactor temperature is then raised to obtain a temperature profile in the reactor ensuring the melting of the charge in the crucible and with the evaporation of the first component beginning, with the pressure inside the reactor being adjusted by the circulation of a gas so that the atmospheric pressure, with the partial pressure of the first component being greater than the partial pressure of the second component.
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