Control of the deposition temperature to reduce the via and contact resistance of Ti and TiN deposited using ionized PVD techniques
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United States of America Patent
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Jan 6, 2004
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N/A
app pub date -
Jan 30, 2002
filing date -
Jan 30, 2001
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Abstract
A method of depositing thin films comprising Ti and TiN within vias and trenches having high aspect ratio openings. The Ti and TiN layers are formed on an integrated circuit substrate using a Ti target in a non-nitrided mode in a hollow cathode magnetron apparatus in combination with controlling the deposition temperatures by integrating cooling steps into the Ti/TiN deposition processes to modulate the via and contact resistance. The Ti and TiN layers are deposited within a single deposition chamber, without the use of a collimator or a shutter.
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