Semiconductor device and method of manufacturing the same
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United States of America Patent
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-
Jan 6, 2004
Grant Date -
Dec 20, 2001
app pub date -
Apr 30, 2001
filing date -
May 24, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant by coating a copper wiring. The low dielectric constant insulating film is formed by reaction of a plasma of a film-forming gas containing an oxygen-containing gas of N.sub.2 O, H.sub.2 O, or CO.sub.2, ammonia (NH.sub.3), and at least one of an alkyl compound having a siloxane bond and methylsilane (SiH.sub.n (CH.sub.3).sub.4-n : n=0, 1, 2, 3).
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