Structure and method for planar lateral oxidation in active
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United States of America Patent
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Jan 6, 2004
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app pub date -
Dec 27, 1999
filing date -
Dec 27, 1999
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Abstract
An active semiconductor device is made using planar lateral oxidation to define a core region that is surrounded by regions of buried oxidized semiconductor material in. The buried oxidized semiconductor material provides optical waveguiding, and or a defined electrical path.
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