Method and system for molecular charge storage field effect transistor
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United States of America Patent
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Jan 6, 2004
Grant Date -
Jun 19, 2003
app pub date -
Dec 14, 2001
filing date -
Dec 14, 2001
priority date (Note) -
Expired
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Abstract
A method and/or system and/or apparatus for a molecular-based FET device (an m-FET) uses charge storing molecules between a gate and channel of an FET-type transistor. Further embodiments describe fabrication methods for using combinations of standard practices in lithography and synthetic chemistry and novel elements.
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