Use of high-k dielectric materials in modified ONO structure for semiconductor devices
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United States of America Patent
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Jan 6, 2004
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app pub date -
Dec 31, 2001
filing date -
Dec 31, 2001
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Abstract
A process for fabrication of a semiconductor device including a modified ONO structure, including forming the modified ONO structure by providing a semiconductor substrate; forming a first oxide layer on the semiconductor substrate; depositing a layer comprising a high-K dielectric material on the first oxide layer; and forming a top oxide layer on the layer comprising a high-K dielectric material. The semiconductor device may be, e.g., a MIRRORBIT.TM. two-bit EEPROM device or a floating gate flash device including a modified ONO structure.
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