Lateral components in power semiconductor devices
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United States of America Patent
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Jan 6, 2004
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N/A
app pub date -
Oct 27, 1999
filing date -
Jan 26, 1996
priority date (Note) -
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Abstract
A method for adjusting the gain or the sensitivity of a lateral component formed in the front surface of a semiconductor wafer, having a first conductivity type, includes not doping or overdoping, according to the first conductivity type, the back surface when it is desired to reduce the gain or sensitivity of the lateral component, and doping according to the second conductivity type, the back surface, when the gain or the sensitivity of the lateral component is to be increased.
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