Importance

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Abstract

A layer comprising a second metal silicide as a major constituent element or a layer comprising a second metal as a major constituent element is formed simultaneously by one single chemical vapor deposition process to the bottom surface of two out of there groups of openings etched in a dielectric film on a substrate. A surface comprising silicon as a major constituent element is exposed at each bottom ('through holes or local interconnection holes') of the first group of openings, a surface comprising a first metal silicide as a major constituent element is exposed at each bottom of the second group of openings, and a surface comprising a first metal as a major constituent element is exposed at each bottom of the third group of openings. The manufacturing method provides low contact resistance and sufficiently small junction leakage current from a diffusion layer in connection with plugs or local interconnections, even if the etched area of the openings are of different depths, shapes, or sizes.

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First Claim