Processes for making a barrier between a dielectric and a conductor and products produced therefrom
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United States of America Patent
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Jan 13, 2004
Issued Date -
N/A
app pub date -
Jul 23, 2001
filing date -
Jul 23, 2001
priority date (Note) -
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Abstract
The formation of a barrier layer over a high k dielectric layer and deposition of a conducting layer over the barrier layer prevents intermigration between the species of the high k dielectric layer and the conducting layer and prevents oxygen scavenging of the high k dielectric layer. One example of a capacitor stack device provided includes a high k dielectric layer of Ta.sub.2 O.sub.5, a barrier layer of TaON or TiON formed at least in part by a remote plasma process, and a top electrode of TiN. The processes may be conducted at about 300 to 700.degree. C. and are thus useful for low thermal budget applications. Also provided are MIM capacitor constructions and methods in which an insulator layer is formed by remote plasma oxidation of a bottom electrode.
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