Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current
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United States of America Patent
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Jan 20, 2004
Grant Date -
Sep 12, 2002
app pub date -
May 8, 2001
filing date -
Jan 26, 2001
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Abstract
A method is described for measuring the capacitance and the equivalent oxide thickness of an ultra thin dielectric layer on a silicon substrate in which the dielectric layer is uniform or patterned. The surface of a dielectric layer is electrically charged by a flux on ions from a corona discharge source until a steady state is reached when the corona flux is balanced by the leakage current across a dielectric. The flux is abruptly terminated and the surface potential of a dielectric is measured versus time. The steady state value of the surface potential is obtained by extrapolation of the potential decay curve to the initial moment of ceasing the corona flux. The thickness of a dielectric layer is determined by using the steady state potential or by using the value of the surface potential after a predetermined time.
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