Nonvolatile memory for which program operation is optimized by controlling source potential
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United States of America Patent
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Jan 20, 2004
Grant Date -
Apr 17, 2003
app pub date -
Mar 18, 2002
filing date -
Oct 12, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a non-volatile memory, the source potential of a selected cell transistor to be programmed is controlled to be changed in accordance with a distance between a program voltage generator connected to a bit line and to the selected cell transistor. When the distance between the selected cell transistor and the program voltage generator is a first distance, the source potential at the selected cell transistor is controlled to be a first potential, and when the distance between them is a second distance longer than the first distance, the source potential at the selected cell transistor is controlled to be a second potential higher than the first potential. As a result, the drain-source voltage at the selected cell transistor to be programmed can be optimized, and optimization of the programming can be implemented.
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