High temperature deposition of Pt/TiOx for bottom electrodes
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United States of America Patent
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Jan 27, 2004
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app pub date -
Apr 24, 2000
filing date -
Apr 24, 2000
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Abstract
A platinum deposition method uses a combination of an oxide adhesion layer and a high temperature thin film deposition process to produce platinum bottom electrodes for ferroelectric capacitors. The platinum bottom electrode is deposited onto a TiO.sub.x layer at temperatures between about 300 and 800.degree. C. Deposition at high temperatures changes the platinum stress from compressive to tensile, increases platinum grain size, and provides a more thermally stable substrate for subsequent PZT deposition.
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