Film forming method and film forming apparatus
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United States of America Patent
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-
Jan 27, 2004
Grant Date -
Dec 26, 2002
app pub date -
Jun 21, 2002
filing date -
Jun 25, 2001
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
After coating a resist for silylation on the semi-conductor substrate, the resist is exposed with a pattern. Then the silylation process is performed to form a silylated layer and the silylated layer is hardened with performing an electron beam processing or a ultra-violet ray processing. After that, an etching is performed with using the hardened silylated layer as a mask and the wiring step is taken without removing the hardened silylated layer as a stopper for chemical mechanical polishing. With this embodiment, the patterning steps of an insulation film can be simplified.
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