Method of manufacturing semiconductor device
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United States of America Patent
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Feb 3, 2004
Grant Date -
N/A
app pub date -
Nov 7, 2000
filing date -
Sep 11, 2000
priority date (Note) -
Expired
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Abstract
A refractory metal film is formed over a semiconductor substrate, and a first nitride film is formed over the refractory metal film. Thereafter, the refractory metal film and the nitride film are patterned and the sides of the patterned refractory metal film are nitrided.
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