Semiconductor assemblies, methods of forming structures over semiconductor substrates, and methods of forming transistors associated with semiconductor substrates
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United States of America Patent
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Feb 10, 2004
Grant Date -
Jun 20, 2002
app pub date -
Nov 13, 2001
filing date -
Jun 22, 2000
priority date (Note) -
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Abstract
The invention encompasses semiconductor assemblies that include a semiconductor substrate having a first region and a second region defined therein. A first oxide region is on the substrate and covers the first region of the substrate. The first oxide region has nitrogen provided therein and substantially all of the nitrogen is at least 10 .ANG. above the semiconductor substrate. A first conductive layer is over the first oxide region and defines a first transistor gate. First source/drain regions are proximate the first transistor gate and gatedly connected to one another by the first transistor gate. The second region is covered by a second oxide region. A second conductive layer is over the second oxide region and defines a second transistor gate. Second source/drain regions are proximate the second transistor gate and gatedly connected to one another by the second transistor gate.
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