Current-compensated CMOS output buffer adjusting edge rate for process, temperature, and Vcc variations
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United States of America Patent
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Feb 10, 2004
Grant Date -
N/A
app pub date -
Oct 16, 2002
filing date -
Oct 16, 2002
priority date (Note) -
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Abstract
Edge rates for output driver transistors are increased for slower conditions such as caused by supply-voltage, temperature, and process variations. The edge rates are increased by increasing charging and discharging currents to the gates of the driver transistors. Process-sensing transistors have gates tied to power or ground. Current through the process-sensing transistors changes with supply-voltage, temperature, and process variations. The currents through process-sensing transistors are used to generate process-compensated voltages that bias current sources and sinks to adjust process-dependent currents. Process-independent or fixed current sources and sinks use process-independent reference voltages ultimately generated from reference currents that are not sensitive to process variations. The process-dependent-currents are subtracted from the fixed currents to produce the charging and discharging currents.
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