Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
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United States of America Patent
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Feb 17, 2004
Grant Date -
Jan 23, 2003
app pub date -
Jul 20, 2001
filing date -
Jul 20, 2001
priority date (Note) -
Expired
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Abstract
High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. A monocrystalline layer is then formed over the accommodating buffer layer, such that a lattice constant of the monocrystalline layer substantially matches the lattice constant of a subsequently grown monocrystalline film.
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