Maskless laser beam patterning ablation of multilayered structures with continuous monitoring of ablation
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United States of America Patent
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-
Feb 24, 2004
Grant Date -
Nov 29, 2001
app pub date -
May 25, 2001
filing date -
May 25, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A maskless patterning apparatus allows for laser beam ablation of one or more layers of material while not etching an underlying different material layer. A micromirror array produces the desired complex pattern on the workpiece and a continuous feature and end point detection system provides location and material parameter changes to accurately control the pattern position and depth of etching. End point detection includes monitoring energy reflected from a specially prepared replica of the material to be ablated, whose thickness and consistency match the active workpiece area. The process terminates when the proper amount of material is removed.
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