US Patent No: 6,696,355

Number of patents in Portfolio can not be more than 2000

Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory

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ALSO PUBLISHED AS: 20030036232
ATTORNEY / AGENT: (SPONSORED)
 

Importance

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Abstract

The present invention relates to a process of forming a phase-change memory. A lower electrode is disposed in a first dielectric film. The lower electrode comprises an upper section and a lower section. The upper section extends beyond the first dielectric film. Resistivity in the upper section is higher than in the lower section. A second dielectric film is disposed over the first dielectric film and has an upper surface that is coplanar with the upper section at an upper surface.

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First Claim

Related Publications

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Patent Owner(s)

Patent OwnerAddressTotal Patents
OVONYX, INC.BOISE, ID282

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dennison, Charles San Jose, CA 44 2137

Cited Art

Patent Info (Count) # Cites Year
 
ROUND ROCK RESEARCH, LLC (9)
5,789,758 Chalcogenide memory cell with a plurality of chalcogenide electrodes 326 1995
5,879,955 Method for fabricating an array of ultra-small pores for chalcogenide memory cells 249 1995
5,998,244 Memory cell incorporating a chalcogenide element and method of making same 259 1996
6,002,140 Method for fabricating an array of ultra-small pores for chalcogenide memory cells 43 1997
6,031,287 Contact structure and memory element incorporating the same 424 1997
5,970,336 Method of making memory cell incorporating a chalcogenide element 257 1997
5,920,788 Chalcogenide memory cell with a plurality of chalcogenide electrodes 449 1997
6,229,157 Method of forming a polysilicon diode and devices incorporating such diode 43 1999
6,153,890 Memory cell incorporating a chalcogenide element 239 1999
 
OVONYX, INC. (3)
5,296,716 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom 436 1991
5,933,365 Memory element with energy control mechanism 367 1997
6,087,674 Memory element with memory material comprising phase-change material and dielectric material 489 1998

Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
MICRON TECHNOLOGY, INC. (140)
6,951,805 Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry 7 2001
6,955,940 Method of forming chalcogenide comprising devices 23 2001
6,815,818 Electrode structure for use in an integrated circuit 13 2001
6,873,538 Programmable conductor random access memory and a method for writing thereto 15 2001
6,909,656 PCRAM rewrite prevention 10 2002
6,791,885 Programmable conductor random access memory and method for sensing same 10 2002
6,891,749 Resistance variable ‘on ’ memory 18 2002
6,809,362 Multiple data state memory cell 13 2002
6,937,528 Variable resistance memory and method for sensing same 11 2002
6,849,868 Methods and apparatus for resistance variable material cells 13 2002
6,864,500 Programmable conductor memory cell structure 191 2002
6,858,482 Method of manufacture of programmable switching circuits and memory cells employing a glass layer 10 2002
6,855,975 Thin film diode integrated with chalcogenide memory cell 24 2002
7,015,494 Assemblies displaying differential negative resistance 9 2002
7,071,021 PCRAM memory cell and method of making same 13 2002
7,018,863 Method of manufacture of a resistance variable memory cell 8 2002
7,364,644 Silver selenide film stoichiometry and morphology control in sputter deposition 3 2002
7,163,837 Method of forming a resistance variable memory element 5 2002
7,010,644 Software refreshed memory device and method 7 2002
6,867,114 Methods to form a memory cell with metal-rich metal chalcogenide 16 2002
6,867,131 Apparatus and method of increasing sram cell capacitance with metal fill 6 2002
6,867,996 Single-polarity programmable resistance-variable memory element 33 2002
6,864,521 Method to control silver concentration in a resistance variable memory element 15 2002
6,856,002 Graded GexSe100-x concentration in PCRAM 18 2002
6,949,453 Agglomeration elimination for metal sputter deposition of chalcogenides 3 2002
6,878,569 Agglomeration elimination for metal sputter deposition of chalcogenides 9 2002
6,894,304 Apparatus and method for dual cell common electrode PCRAM memory device 110 2003
6,813,178 Chalcogenide glass constant current device, and its method of fabrication and operation 15 2003
7,022,579 Method for filling via with metal 2 2003
7,050,327 Differential negative resistance memory 14 2003
6,888,155 Stoichiometry for chalcogenide glasses useful for memory devices and method of formation 18 2003
6,961,277 Method of refreshing a PCRAM memory device 24 2003
7,061,004 Resistance variable memory elements and methods of formation 5 2003
6,812,087 Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures 10 2003
6,858,465 Elimination of dendrite formation during metal/chalcogenide glass deposition 2 2003
6,833,559 Non-volatile resistance variable device 3 2003
6,882,578 PCRAM rewrite prevention 4 2003
6,998,697 Non-volatile resistance variable devices 10 2003
7,528,401 Agglomeration elimination for metal sputter deposition of chalcogenides 1 2004
6,974,965 Agglomeration elimination for metal sputter deposition of chalcogenides 4 2004
7,105,864 Non-volatile zero field splitting resonance memory 5 2004
7,056,762 Methods to form a memory cell with metal-rich metal chalcogenide 8 2004
7,022,555 Methods of forming a semiconductor memory device 1 2004
6,949,402 Method of forming a non-volatile resistance variable device 1 2004
6,953,720 Methods for forming chalcogenide glass-based memory elements 12 2004
7,479,650 Method of manufacture of programmable conductor memory 6 2004
7,098,068 Method of forming a chalcogenide material containing device 6 2004
7,087,454 Fabrication of single polarity programmable resistance structure 8 2004
7,087,919 Layered resistance variable memory device and method of fabrication 10 2004
6,908,808 Method of forming and storing data in a multiple state memory cell 3 2004
7,002,833 Complementary bit resistance memory sensor and method of operation 30 2004
7,115,504 Method of forming electrode structure for use in an integrated circuit 8 2004
7,115,992 Electrode structure for use in an integrated circuit 2 2004
7,332,401 Method of fabricating an electrode structure for use in an integrated circuit 7 2004
7,459,764 Method of manufacture of a PCRAM memory cell 5 2004
7,190,048 Resistance variable memory device and method of fabrication 9 2004
7,365,411 Resistance variable memory with temperature tolerant materials 11 2004
7,354,793 Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element 5 2004
6,954,385 Method and apparatus for sensing resistive memory state 15 2004
7,030,410 Resistance variable device 8 2004
7,209,378 Columnar 1T-N memory cell structure 6 2004
7,151,688 Sensing of resistance variable memory devices 7 2004
7,094,700 Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes 1 2004
7,223,627 Memory element and its method of formation 5 2004
7,329,558 Differential negative resistance memory 6 2004
7,112,484 Thin film diode integrated with chalcogenide memory cell 5 2004
7,049,009 Silver selenide film stoichiometry and morphology control in sputter deposition 3 2004
7,374,174 Small electrode for resistance variable devices 6 2004
7,317,200 SnSe-based limited reprogrammable cell 5 2005
7,224,632 Rewrite prevention in a variable resistance memory 4 2005
7,202,520 Multiple data state memory cell 4 2005
7,348,205 Method of forming resistance variable devices 4 2005
7,709,289 Memory elements having patterned electrodes and method of forming the same 0 2005
7,427,770 Memory array for increased bit density 4 2005
7,269,044 Method and apparatus for accessing a memory array 1 2005
7,385,868 Method of refreshing a PCRAM memory device 5 2005
7,269,079 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory 1 2005
7,326,950 Memory device with switching glass layer 6 2005
7,233,520 Process for erasing chalcogenide variable resistance memory bits 6 2005
7,274,034 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication 6 2005
7,332,735 Phase change memory cell and method of formation 12 2005
7,317,567 Method and apparatus for providing color changing thin film material 6 2005
7,518,212 concentration in PCRAM 4 2005
7,579,615 Access transistor for memory device 4 2005
7,304,368 Chalcogenide-based electrokinetic memory element and method of forming the same 5 2005
7,251,154 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance 12 2005
7,277,313 Resistance variable memory element with threshold device and method of forming the same 5 2005
7,199,444 Memory device, programmable resistance memory cell and memory array 3 2005
7,242,603 Method of operating a complementary bit resistance memory sensor 7 2005
7,294,527 Method of forming a memory cell 5 2005
7,307,908 Software refreshed memory device and method 4 2005
7,235,419 Method of making a memory cell 4 2005
7,550,818 Method of manufacture of a PCRAM memory cell 4 2006
7,396,699 Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry 5 2006
7,547,905 Programmable conductor memory cell structure and method therefor 0 2006
7,723,713 Layered resistance variable memory device and method of fabrication 6 2006
7,393,798 Resistance variable memory with temperature tolerant materials 11 2006
7,190,608 Sensing of resistance variable memory devices 7 2006
7,459,336 Method of forming a chalcogenide material containing device 0 2006
7,366,003 Method of operating a complementary bit resistance memory sensor and method of operation 0 2006
7,692,177 Resistance variable memory element and its method of formation 4 2006
7,348,209 Resistance variable memory device and method of fabrication 5 2006
7,700,422 Methods of forming memory arrays for increased bit density 0 2006
7,910,397 Small electrode for resistance variable devices 0 2006
7,663,133 Memory elements having patterned electrodes and method of forming the same 0 2006
7,289,349 Resistance variable memory element with threshold device and method of forming the same 5 2006
7,366,045 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory 0 2006
7,498,231 Multiple data state memory cell 0 2007
7,282,783 Resistance variable memory device and method of fabrication 6 2007
7,709,885 Access transistor for memory device 9 2007
7,994,491 PCRAM device with switching glass layer 1 2007
7,759,665 PCRAM device with switching glass layer 4 2007
7,643,333 Process for erasing chalcogenide variable resistance memory bits 0 2007
7,687,793 Resistance variable memory cells 9 2007
7,564,731 Software refreshed memory device and method 3 2007
7,668,000 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance 1 2007
7,433,227 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication 7 2007
8,101,936 SnSe-based limited reprogrammable cell 0 2007
7,663,137 Phase change memory cell and method of formation 5 2007
7,745,808 Differential negative resistance memory 5 2007
7,749,853 Method of forming a variable resistance memory device comprising tin selenide 4 2008
7,863,597 Resistance variable memory devices with passivating material 1 2008
7,879,646 Assemblies displaying differential negative resistance, semiconductor constructions, and methods of forming assemblies displaying differential negative resistance 1 2008
7,785,976 Method of forming a memory device incorporating a resistance-variable chalcogenide element 5 2008
7,586,777 Resistance variable memory with temperature tolerant materials 6 2008
7,869,249 Complementary bit PCRAM sense amplifier and method of operation 0 2008
7,551,509 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory 0 2008
7,682,992 Resistance variable memory with temperature tolerant materials 5 2008
7,701,760 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication 7 2008
7,768,861 Software refreshed memory device and method 0 2009
7,791,058 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication 3 2009
7,978,500 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance 0 2010
7,924,603 Resistance variable memory with temperature tolerant materials 1 2010
7,968,927 Memory array for increased bit density and method of forming the same 0 2010
7,940,556 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication 1 2010
8,263,958 Layered resistance variable memory device and method of fabrication 0 2010
8,334,186 Method of forming a memory device incorporating a resistance variable chalcogenide element 0 2010
7,944,768 Software refreshed memory device and method 0 2010
8,030,636 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication 0 2010
8,189,366 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance 0 2011
 
ROUND ROCK RESEARCH, LLC (11)
6,867,064 Method to alter chalcogenide glass for improved switching characteristics 10 2002
6,890,790 Co-sputter deposition of metal-doped chalcogenides 3 2002
6,903,361 Non-volatile memory structure 28 2003
7,153,721 Resistance variable memory elements based on polarized silver-selenide network growth 5 2004
7,583,551 Power management control and controlling memory refresh operations 1 2004
7,202,104 Co-sputter deposition of metal-doped chalcogenides 1 2004
6,946,347 Non-volatile memory structure 8 2004
7,276,722 Non-volatile memory structure 6 2005
7,446,393 Co-sputter deposition of metal-doped chalcogenides 0 2007
7,491,963 Non-volatile memory structure 0 2007
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NANOCHIP, INC. (9)
6,985,377 Phase change media for high density data storage 10 2003
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7,301,887 Methods for erasing bit cells in a high density data storage device 2 2004
7,463,573 Patterned media for a high density data storage device 5 2005
7,367,119 Method for forming a reinforced tip for a probe storage device 2 2005
7,309,630 Method for forming patterned media for a high density data storage device 78 2005
7,336,524 Atomic probes and media for high density data storage 2 2005
7,391,707 Devices and methods of detecting movement between media and probe tip in a probe data storage system 1 2007
7,414,953 Memory having a layer with electrical conductivity anisotropy 3 2007
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (3)
7,381,981 Phase-change TaN resistor based triple-state/multi-state read only memory 1 2005
7,880,158 Phase-change TaN resistor based triple-state/multi-state read only memory 0 2008
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SAMSUNG ELECTRONICS CO., LTD. (2)
7,149,155 Channeled dielectric re-recordable data storage medium 5 2002
7,485,559 Semiconductor device and method of fabricating the same 1 2005
 
APTINA IMAGING CORPORATION (1)
6,930,909 Memory device and methods of controlling resistance variation and resistance profile drift 31 2003
 
INTEL CORPORATION (1)
7,217,945 Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory cell and structures obtained thereby 7 2005
 
MACRONIX INTERNATIONAL CO., LTD. (1)
8,158,965 Heating center PCRAM structure and methods for making 0 2008
 
NANYA TECHNOLOGY CORPORATION (1)
6,930,043 Method for forming DRAM cell bit line and bit line contact structure 0 2003

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