Technique for etching a low capacitance dielectric layer
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United States of America Patent
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Feb 24, 2004
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app pub date -
Jun 30, 1999
filing date -
Aug 17, 1998
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Abstract
Techniques for etching through a low capacitance dielectric layer in a plasma processing chamber are disclosed. The techniques uses an etch chemistry that includes N.sub.2, O.sub.2, and a hydrocarbon. By etching the low capacitance dielectric layer with a plasma created out of the etch chemistry, fast etch rates can be obtained while also maintaining profile control and preserving critical dimension of the resultant opening (e.g., via/trench) being etched in the low capacitance layer.
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