Photovoltaic device
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United States of America Patent
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Mar 2, 2004
Grant Date -
Jan 23, 2003
app pub date -
Jun 25, 2002
filing date -
Jun 29, 2001
priority date (Note) -
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Abstract
The present invention provides a photovoltaic device comprising an electricity generating layer including at least one p/n type junction, the layer comprising a silicon-based non-single-crystalline semiconductor material, wherein a nitrogen concentration has a maximum peak at the junction interface of the p/n type junction, and the nitrogen concentration at the maximum peak is within a range from 1.times.10.sup.18 atom/cm.sup.3 to 1.times.10.sup.20 atom/cm.sup.3, thereby providing a photovoltaic device of high photoelectric conversion efficiency and high reliability.
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