Detecting defects on photomasks
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United States of America Patent
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Mar 2, 2004
Grant Date -
N/A
app pub date -
Dec 22, 1999
filing date -
Dec 22, 1999
priority date (Note) -
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Abstract
Defects on at least one photomask are detected by patterning alternating dice on a wafer with different process conditions. The different conditions, such as a length of exposure time and an optical focus condition, are configured to highlight and detect defect areas.
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