Buried strap with limited outdiffusion and vertical transistor DRAM
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United States of America Patent
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Mar 9, 2004
Grant Date -
N/A
app pub date -
Jan 3, 2003
filing date -
Jan 3, 2003
priority date (Note) -
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status (Latency Note)
Importance
Abstract
A DRAM cell with a vertical transistor forms a buried strap outdiffusion with reduced lateral extent by shifting high temperature steps that affect the thermal budget before the initial buried strap diffusion. The gate conductor is formed in two steps, with poly sidewalls being put down above a sacrificial Trench top oxide to form a self-aligned poly-gate insulator structure before the formation of the LDD extension.
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