Method for forming crystalline silicon layer and crystalline silicon semiconductor device
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United States of America Patent
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Mar 9, 2004
Issued Date -
N/A
app pub date -
Dec 10, 2001
filing date -
Mar 14, 2001
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Expired
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Abstract
A plurality of linear catalytic metal element portions are arranged at predetermined intervals just on or just beneath an amorphous silicon layer, and, in this state, the amorphous silicon layer is heat treated to crystallize the amorphous silicon layer and consequently to form a polycrystalline silicon layer. This construction can realize the provision of a method for the formation of an evenly oriented, high-quality crystalline silicon layer in a large area, and a crystalline silicon semiconductor device produced by this method.
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