Method of implantation after copper seed deposition
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United States of America Patent
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-
Mar 9, 2004
Grant Date -
Feb 5, 2004
app pub date -
Nov 26, 2001
filing date -
Nov 26, 2001
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of fabricating an integrated circuit can include forming a barrier layer along lateral side walls and a bottom of a via aperture, forming a seed layer proximate and conformal to the barrier layer, and forming an implanted layer proximate and conformal to the barrier layer and the seed layer. The via aperture is configured to receive a via material that electrically connects a first conductive layer and a second conductive layer.
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