Method of making an improved MR sensor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 16, 2004
Grant Date -
N/A
app pub date -
May 12, 1997
filing date -
Sep 6, 1996
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of making a magnetoresistance sensor which detects stored information from a medium and which provides an output voltage to a auxiliary circuitry is disclosed. The method comprises sputtering a bias layer in a sputtering gas mixture of nitrogen and argon. A spacer layer is also formed in a sputtering gas mixture of nitrogen and argon. Finally, an MR magnetic layer is formed. The spacer layer is positioned between the bias layer and the magnetic layer. The output voltage is provided to auxiliary circuitry when a current flows through the MR magnetic layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully