Method for forming multiple structures in a semiconductor device
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United States of America Patent
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Mar 16, 2004
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N/A
app pub date -
Oct 22, 2002
filing date -
Oct 22, 2002
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Abstract
A method of forming multiple structures in a semiconductor device includes depositing a film over a conductive layer, etching a trench in a portion of the film and forming adjacent the sidewalls of the trench. The film may then be etched, followed by an of the conductive layer to form the structures.
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