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Abstract

An electronic device and method of construction are disclosed that provide for a dielectric layer (12) having a low dielectric constant. A conductive sheath layer (18) is disposed adjacent to the dielectric layer (12). The conductive sheath layer (18) is operable to electrically divert etchant particles used in a plasma etch process away from the dielectric layer (12). In another embodiment of the disclosed invention, a method is provided which comprises covering an inner layer (40) with a layer of dielectric material (42). The method also comprises depositing a conductive sheath layer (48) outwardly from the layer of dielectric material (42). A photoresist layer (50) is then deposited outwardly from the conductive sheath layer (48). The photoresist layer (50) is then patterned resulting in a patterned mask composed of portions of the photoresist layer (50) disposed outwardly from the conductive sheath layer (48). Portions of the conductive sheath layer (48) not covered by the patterned mask are etched using a plasma etch process selective to the conductive sheath layer (48) relative to the photoresist layer (50). Portions of the dielectric layer (42) not covered by the patterned mask are also etched using a plasma etch process selective to the dielectric layer (42) relative to the photoresist layer (50). The photoresist layer (50) is then removed from the conductive sheath layer (48), the conductive sheath layer (48) providing mechanical and electrical shielding for the dielectric layer (42).

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First Claim