Importance

Loading Importance Indicators...

Abstract

A self-aligned split-gate flash cell structure of the present invention comprises a ridge-shaped floating-gate layer being formed on a first gate dielectric layer with a first intergate dielectric layer being formed on its top portion and a second intergate dielectric layer being formed on its inner sidewall; a control/select-gate conductive layer being formed at least over a second gate dielectric layer and the first/second intergate dielectric layers; and a common-source diffusion region and a common-drain diffusion region being implanted by aligning to the control/select-gate conductive layer. The self-aligned split-gate flash cell structure is configured into two contactless array architectures: a contactless NOR-type flash memory array and a contactless parallel common-source/drain conductive bit-lines flash memory array.

Loading the Abstract Image...

First Claim