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United States of America Patent

PATENT NO 6712437
APP PUB NO 20020191037A1
SERIAL NO

10160008

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Abstract

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The gate-width ratio between an NMOS transistor (1) and PMOS transistors (2, 3) constructing an initial inverter stage of a voltage converting circuit is set in such a manner that the threshold voltage of the initial inverter becomes a voltage at which an inversion is possible, this voltage being less than one-half the power-supply voltage (VHT) of the voltage converting circuit and, moreover, less than the power-supply voltage (Vdd) of a logic circuit.

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Patent Owner(s)

Patent OwnerAddress
CANON KABUSHIKI KAISHATOKYO 146-8501

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Furukawa, Tatsuo Kanagawa, JP 66 778
Hirayama, Nobuyuki Kanagawa, JP 95 591
Imanaka, Yoshiyuki Kanagawa, JP 183 2225

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