Importance

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Abstract

A semiconductor memory device includes a trench type SRAM(Static Random Access Memory) cell having a higher integration than a stack type SRAM. The SRAM cell memory device is provided with a trench formed in a semiconductor substrate and having four side walls therein, wherein a source and drain region of a drive transistor is formed in two of the four side walls, respectively, a pair of active layers respectively having a source and drain regions of a first load transistor is formed on the substrate adjacent to the side walls, and a gate electrode common to the load transistor is formed on a gate oxide film, whereby the gate electrode of the access transistor is vertically formed toward a direction vertical to the semiconductor substrate instead of being formed on the substrate for thereby decreasing an area to be occupied by transistor.

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First Claim