Semiconductor device manufacturing method
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United States of America Patent
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Mar 30, 2004
Grant Date -
Mar 6, 2003
app pub date -
Jul 30, 2002
filing date -
Aug 24, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A surface of a copper (Cu) wiring layer formed over a semiconductor substrate is exposed to a plasma gas selected from the group consisting of an ammonia gas, a mixed gas of nitrogen and hydrogen, a CF.sub.4 gas, a C.sub.2 F.sub.6 gas and a NF.sub.3 gas. The surface of the copper (Cu) wiring layer is then exposed to an atmosphere or a plasma of a gas selected from the group consisting of an ammonia gas, an ethylenediamine gas, a fA-diketone gas, a mixed gas consisting of the ammonia gas and a hydrocarbon gas (C.sub.x H.sub.y), and a mixed gas consisting of a nitrogen gas and the hydrocarbon gas (C.sub.x H.sub.y), and a Cu diffusion preventing insulating film is formed on the copper (Cu) wiring layer.
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