Method of programming a multi-level memory device

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United States of America Patent

PATENT NO 6714448
SERIAL NO

10190374

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Abstract

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A method of programming a multi-level memory chip in which the first, or lowest, voltage memory state through the next-to-last voltage memory state are programmed by a plurality of programming pulses increasing incrementally in voltage, alternated with a plurality of verify pulses, and in which the last, or highest, voltage memory state of the memory cell is programmed with a programming pulse of the threshold voltage required for charging the memory cell to the highest voltage memory state. The programming method provides accuracy in programming the intermediate memory states of the cell, while providing speed in programming the last memory state of the cell to increase the overall speed of the programming the memory cell.

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Patent Owner(s)

Patent OwnerAddress
ARTEMIS ACQUISITION LLC801 CALIFORNIA ST MOUNTAIN VIEW CA 94041

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Manea, Danut I Cupertino, CA 5 93

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