Method of forming a semiconductor package
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United States of America Patent
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Apr 6, 2004
Grant Date -
Mar 13, 2003
app pub date -
Sep 11, 2001
filing date -
Sep 11, 2000
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor package production method containing a step in which a bond layer made of a single-layer film thermoset bond is provided on the back of a wafer on which many semiconductor devices are formed, a dicing tape is pasted onto its bond layer side, and the bond layer and the wafer are diced simultaneously in order to obtain semiconductor devices with the bond layer, and a step in which the semiconductor devices with the bond layer are detached from the dicing tape and die-attached to interposing substrates serving as bodies to which they are bonded; wherein, the aforementioned film thermoset bond contains an epoxy resin, an epoxy resin hardener, and a phenoxy resin as well as 50-80 wt % of spherical silica, and the bond layer is 100 .mu.m or thicker. A semiconductor device made by this method and a wafer for use with this method.
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