Semiconductor device and the manufacturing method thereof
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United States of America Patent
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Apr 6, 2004
Grant Date -
Jan 2, 2003
app pub date -
Jun 28, 2002
filing date -
Jun 28, 2001
priority date (Note) -
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Abstract
A semiconductor device has a bump electrode formed on a flat surface of a passivation film of the device. The bump electrode is connected to a top wiring layer through a plurality of openings in the passivation film underneath the bump electrode, which are filled with a conductive material. The bump electrode is formed away from via holes, which connects the top wiring layer for the bump electrode and a lower wiring layer connected to source and drain layers of the device.
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