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Abstract

Embodiments of the invention relate to an apparatus and method of depositing a titanium silicon nitride layer by cyclical deposition. In one aspect, a titanium silicon nitride layer having a variable content or a controlled composition of titanium, silicon, and nitrogen through the depth of the layer may be formed. One embodiment of this variable content titanium silicon nitride layer or tuned titanium silicon nitride layer includes a bottom sub-layer of TiSi.sub.X1 N.sub.Y1, a middle sub-layer of TiSi.sub.X2 N.sub.Y2, and a top sub-layer of TiSi.sub.X3 N.sub.Y3 in which X1 is less than X2 and X3 is less than X2. Another embodiment of a variable content titanium silicon nitride layer includes a bottom sub-layer of TiSi.sub.X1 N.sub.Y1 and a top sub-layer of TiSi.sub.X2 N.sub.Y2 in which X2 is greater than X1. Still another embodiment of a variable content titanium silicon nitride layer includes a bottom sub-layer of TiSi.sub.X1 N.sub.Y1, a middle sub-layer of TiSi.sub.X2 N.sub.Y2, and a top sub-layer of TiSi.sub.X3 N.sub.Y3 in which X1 is greater than X2 and X3 is greater than X2.

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First Claim