Semiconductor device having diffusion layer formed using dopant of large mass number
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United States of America Patent
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Apr 13, 2004
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N/A
app pub date -
May 29, 2001
filing date -
Jun 20, 2000
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Abstract
Between a source/drain heavily-doped diffusion layer and a region below a side face of a gate electrode in an epitaxial semiconductor substrate, an extension heavily-doped diffusion layer where N-type As ions are diffused is formed to have shallower junction than the source/drain heavily-doped diffusion layer. A pocket heavily-doped diffusion layer where P-type indium ions, that is, heavy ions having a relatively large mass number, are diffused is formed under the extension heavily-doped diffusion layer.
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