Methods of forming capacitors and methods of forming capacitor dielectric layers
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United States of America Patent
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Apr 20, 2004
Grant Date -
Jun 5, 2003
app pub date -
Dec 3, 2001
filing date -
Dec 3, 2001
priority date (Note) -
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Abstract
A method of forming a capacitor includes forming first capacitor electrode material over a semiconductor substrate. A silicon nitride comprising layer is formed over the first capacitor electrode material. The semiconductor substrate with silicon nitride comprising layer is provided within a chamber. An oxygen comprising plasma is generated remote from the chamber. The remote plasma generated oxygen is fed to the semiconductor substrate within the chamber at a substrate temperature of no greater than 750.degree. C. effective to form a silicon oxide comprising layer over the silicon nitride comprising layer. After the feeding, a second capacitor electrode material is formed over the silicon oxide comprising layer. Methods of forming capacitor dielectric layers are also disclosed.
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