Fork-like memory structure for ULSI DRAM
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United States of America Patent
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Apr 20, 2004
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N/A
app pub date -
Jan 20, 1999
filing date -
Dec 5, 1996
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Expired
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Abstract
A masking and etching technique during the formation of a memory cell capacitor which simultaneously separates storage poly into individual storage poly nodes and etches recesses into the storage poly nodes which increase the surface area of the storage poly nodes and thereby increase the capacitance of a completed memory cell without additional processing steps.
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