Method for fabricating post-process one-time programmable read only memory cell
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United States of America Patent
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Apr 27, 2004
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N/A
app pub date -
Dec 26, 2002
filing date -
Dec 26, 2002
priority date (Note) -
Expired
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Abstract
The present invention generally relates to a method for fabricating a post-process one-time programmable (OTP) read only memory cell (ROM cell). The OTP ROM cell has two oxide layers positioned on a semiconductor substrate and a plurality of semiconductor-implanted regions are implanted in the semiconductor substrate. Oxide layers are respectively to those semiconductor-implanted regions of the semiconductor substrate and having a window-type isolating channel region for each. Finally, a polysilicon layer is positioned on the thicker oxide layer as a gate electrode region of the OTP ROM cell. Hence, the polysilicon layer can be applied a voltage to penetrate the thinker oxide layer of the window-type isolating channel region to form a P-N junction between the semiconductor-implanted regions and the polysilicon layer and then the ROM cell is programmed.
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