Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device
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United States of America Patent
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May 4, 2004
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N/A
app pub date -
Aug 10, 2000
filing date -
Aug 13, 1999
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Abstract
To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.
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