Capacitors and methods of forming capacitors

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United States of America Patent

PATENT NO 6730559
SERIAL NO

09059057

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The invention includes methods of forming capacitors and capacitor constructions. In one implementation, a method of forming a capacitor includes forming a first capacitor electrode. A first layer of a first capacitor dielectric material is formed over the first capacitor electrode. A second layer of the first capacitor dielectric material is formed on the first layer. A second capacitor electrode is formed over the second layer of the first capacitor dielectric material. A capacitor in accordance with an implementation of the invention includes a pair of capacitor electrodes having capacitor dielectric material therebetween comprising a composite of two immediately juxtaposed and contacting, yet discrete, layers of the same capacitor dielectric material.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Agarwal, Vishnu K Boise, ID 150 3214
Derderian, Garo J Boise, ID 185 8529

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