Abrasive composition for polishing semiconductor device and method for producing semiconductor device using the same
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United States of America Patent
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May 11, 2004
Grant Date -
May 23, 2002
app pub date -
Apr 12, 2001
filing date -
Apr 13, 2000
priority date (Note) -
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Abstract
The present invention can provide an abrasive composition for polishing a semiconductor device which composition contains water, microparticles of an abrasive, and a chelating agent, wherein the abrasive is cerium oxide; the microparticles of cerium oxide have an average particle size of 0.01-1.0 .mu.m and which composition is used for suitably forming a shallow trench isolation structure in a well-controlled manner during planarization of a semiconductor device including element-isolated structure. The invention also provides a method for producing the semiconductor device by use of the abrasive composition.
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