Method for forming silicon quantum dots and method for fabricating nonvolatile memory device using the same
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United States of America Patent
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May 11, 2004
Grant Date -
Jun 6, 2002
app pub date -
Nov 15, 2001
filing date -
Nov 17, 2000
priority date (Note) -
Expired
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Abstract
A method for forming silicon quantum dots and a method for fabricating a nonvolatile memory device using the same, suitable for high speed and high packing density. The method for forming silicon quantum dots includes the steps of forming a first insulating film on a semiconductor substrate, forming a plurality of nano-crystalline silicons on the first insulating film, forming a second insulating film on the first insulating film including the nano-crystalline silicons, partially etching the second insulating film and the nano-crystalline silicons, and oxidizing surfaces of the nano-crystalline silicons.
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