Circuit and method for implementing a write operation with TCCT-based memory cells
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United States of America Patent
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May 11, 2004
Grant Date -
Apr 15, 2004
app pub date -
Oct 15, 2002
filing date -
Oct 15, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention provides a circuit and a method for providing nondestructive write operations and optimized memory access operations with reduced power consumption during memory access, such as during write operations. In one embodiment, a memory device comprises a memory cell configured to store a first data bit. The memory device also comprises a write access circuit coupled to the memory cell for providing a write data bit having a write data bit magnitude. The write access circuit is configured to adjust the write data bit magnitude to an intermediate logic state magnitude in a memory operation.
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