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Abstract

The silicon etching apparatus using XeF.sub.2 includes: a basic structure composed of a loading chamber tot loading XeF.sub.2, an expansion chamber for collecting sublimated XeF.sub.2 gas, and an etching chamber for performing an etching process; and a means for injecting nitrogen prior to the etching process to eliminate air moisture in the apparatus and thus preventing the formation of HF. The silicon etching apparatus using XeF.sub.2 further includes: an injector having a predefined shape provided in the etching chamber for uniformly injecting the XeF.sub.2 gas downward on to surface of a wafer; a feedback controller for feedback controlling the internal pressure of the loading chamber in order to prevent sublimation of the residual XeF.sub.2 in the loading chamber; and a weight scale for measuring the weight of XeF.sub.2 in the loading chamber.

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First Claim