Process for coating silicon shot with dopant for addition of dopant in crystal growth
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United States of America Patent
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May 25, 2004
Grant Date -
Nov 13, 2003
app pub date -
May 9, 2002
filing date -
May 9, 2002
priority date (Note) -
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Abstract
An inexpensive method of coating silicon shot with boron atoms comprises (1) immersing silicon shot in a boron dopant spin-on solution comprising a borosilicate, a polymer precursor, and a volatile solvent, and (2) removing the solvent so as to leave a polymeric coating containing borosilicate on the shot. A precise amount of this coated shot may then be mixed with a measured quantity of silicon pellets and the resulting mixture may then be melted to provide a boron-doped silicon melt for use in growing p-type silicon bodies that can be converted to substrates for photovoltaic solar cells.
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