Capacitor for semiconductor memory device and method of manufacturing the same
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United States of America Patent
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May 25, 2004
Grant Date -
N/A
app pub date -
Jun 26, 2000
filing date -
Jun 25, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Disclosed are a capacitor for a semiconductor device capable of increasing storage capacitance and preventing leakage current, and a method of manufacturing the same. According to the present invention, a lower electrode is formed on a semiconductor substrate. A surface of the lower electrode is surface-treated to prevent generation of a natural oxide layer. A TaON layer as a dielectric layer is deposited on the lower electrode. Impurities of the TaON layer are crystallized and out-diffused. And an upper electrode is deposited on the TaON layer. Herein, the TaON layer is formed by a chemical vapor reaction of Ta obtained from O.sub.2 gas and NH.sub.3 gas in an LPCVD chamber to which O.sub.2 gas and NH.sub.3 gas are supplied at a pressure of 0.1.about.10 Torr at a temperature of 300.about.600.degree. C., respectively.
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